Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a
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Point Contact Resistive Switching Memory Based On, 44% OFF
Nanomaterials, Free Full-Text
a) The endurance and (b) the retention characteristics of the
Nanomaterials, Free Full-Text
Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a
The schematic of 3D horizontal stacking RRAM array (HRRAM). The
Metals, Free Full-Text
Excellent resistive switching properties of atomic layer-deposited
Examples of plots that do not provide enough data to reliably
Device area effect of Al/HfOx/Al RRAM (a) on the HRS and LRS, (b
Improving endurance and reliability by optimizing the alternating
Facilitation of the thermochemical mechanism in NiO-based
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Voltage divider effect for the improvement of variability and
